Embedded DRAM technologies

被引：22

作者：

Ishiuchi, H ^{[1
]}

Yoshida, T ^{[1
]}

Takato, H ^{[1
]}

Tomioka, K ^{[1
]}

Matsuo, K ^{[1
]}

Momose, H ^{[1
]}

Sawada, S ^{[1
]}

Yamazaki, K ^{[1
]}

Maeguchi, K ^{[1
]}

机构：

[1] Toshiba Corp, Semicond Grp, Microelect Engn Lab, Isogo Ku, Yokohama, Kanagawa 241, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.649449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Issues on embedded DRAM technologies including their applications, process options, and tradeoffs are discussed. Real implementations of the embedded DRAM technologies with 0.5 um, 0.35 um, and 0.25 um are also presented. The embedded DRAM technologies will be used to realize high bandwidth and low power operation.

引用

页码：33 / 36

页数：4