Novel substrate contact structure for high-Q silicon-integrated spiral inductors

被引：36

作者：

Burghartz, JN ^{[1
]}

Ruehli, AE ^{[1
]}

Jenkins, KA ^{[1
]}

Soyuer, M ^{[1
]}

Nguyen-Ngoc, D ^{[1
]}

机构：

[1] IBM Corp, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.649454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The general effects of a substrate contact near a spiral inductor on a silicon substrate are investigated. It is found that a string of substrate contacts enclosing the inductor can have beneficial or detrimental effects, depending if the inductor is configured as a one-porter a two-port structure. A 40% increase of the quality factor is found for an inductor in which the substrate contact is connected to ground. The general guidelines for an optimum inductor implementation in an integrated rf circuit are highlighted.

引用

页码：55 / 58

页数：4