Diode-pumped self-frequency-doubling Nd:GdCa4O(BO3)3 lasers:: toward green microchip lasers

被引:35
作者
Lucas-Leclin, G
Augé, F
Auzanneau, SC
Balembois, F
Georges, P
Brun, A
Mougel, E
Aka, G
Vivien, D
机构
[1] Ctr Univ, Inst Opt, Lab Charles Fabry, CNRS,UMR 8501, F-91403 Orsay, France
[2] Ecole Natl Super Chim Paris, Lab Chim Appl Etat Solide, CNRS, UMR 7574, F-75231 Paris 05, France
[3] Crismatec, Nemours, France
关键词
Microchip lasers;
D O I
10.1364/JOSAB.17.001526
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
An output power of 115 mW at 545 nm has been obtained from a diode-pumped self-frequency doubling Nd:GdCa4O(BO3)(3) laser in a stable cavity. The infrared emission of the laser was found to be 1091 nm, not the 1060 nm that was expected when the highest line of the fluorescence spectrum was considered. We have demonstrated that the emission at 1091 nm was caused by the temperature increase at the focus of the pump beam. We demonstrated also, for what we believe was the first time, lasing operation of Nd:GdCOB in a plano-plano cavity and obtained an output power of 22 mW at 545 nm. To our knowledge, this is the highest output power ever reported with a self-frequency-doubling crystal in a plano-plano cavity. (C) 2000 Optical Society of America [S0740-3224(00)00409-4].
引用
收藏
页码:1526 / 1530
页数:5
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