Data retention, endurance and acceleration factors of NROM devices

被引：33

作者：

Janai, M ^{[1
]}

机构：

[1] Saifun Semicond Ltd, IL-42504 Netanya, Israel

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

NVM; trapped charge; NROM; retention; endurance; product reliability; qualification; acceleration factor;

D O I：

10.1109/RELPHY.2003.1197799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability studies of Saifun NROM1 devices are presented. Data retention characteristics vs time, temperature and cycling level are explained based on a charge trapping and re-emission model. The thermal acceleration factor between ambient storage and 150degreesC is shown to be 7x10(5). Storage life at room temperature after 100K memory cycles is predicted to be in excess of 100 years. Qualification method of NROM devices is discussed in view of these results.

引用

页码：502 / 505

页数：4

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