VHF plasma deposition of μc-Si p-layer materials

被引：8

作者：

Deng, X ^{[1
]}

Jones, SJ ^{[1
]}

Liu, T ^{[1
]}

Izu, M ^{[1
]}

Ovshinsky, SR ^{[1
]}

Hoffman, K ^{[1
]}

机构：

[1] Energy Convers Devices Inc, Troy, MI 48084 USA

来源：

AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997 | 1997年 / 467卷

关键词：

D O I：

10.1557/PROC-467-795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microcrystalline silicon (mu c-Si) p-layers have been widely used in amorphous silicon (a-Si) solar cell research and manufacturing to achieve record high solar cell efficiency. In order to further improve the solar cell performance and achieve wider parameter windows for the process conditions, we studied the deposition of high quality mu c-Si p-layer material using a very high frequency (VHF) plasma enhanced CVD process. A design of experiment (DOE) approach was used for the exploration and optimization of deposition parameters. The usage of DOE leads to a quick optimization of the deposition process within a short time frame. In addition, by using a modified VHF deposition process, we have improved the solar cell blue response which leads to a 6-10% improvement in the solar cell efficiency. Such an improvement is likely due to an improved microcrystalline formation in the p-layer.

引用

页码：795 / 800

页数：6