Reconstruction of the surface topography of randomly textured silicon

被引：11

作者：

Kuchler, G ^{[1
]}

Brendel, R ^{[1
]}

机构：

[1] Bavarian Ctr Appl Energy Res, ZAE Bayem, D-91058 Erlangen, Germany

来源：

PROGRESS IN PHOTOVOLTAICS | 2003年 / 11卷 / 02期

关键词：

surface topography; silicon; thin film; stereoscopic; texture; anisotropic etching; random pyramids; characterisation;

D O I：

10.1002/pip.463

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We describe an algorithm that reconstructs a surface model from stereoscopic scanning electron micrographs of randomly textured silicon surfaces. From the reconstructed model we extract size distributions of the {111}-faceted upright pyramids. The algorithm is thus a useful tool for statistical control of the texturing process. Copyright (C) 2002 John Wiley Sons, Ltd.

引用

页码：89 / 95

页数：7