Trapping of hydrogen to lattice defects in nickel

被引：103

作者：

Baskes, MI ^{[1
]}

Sha, XW

Angelo, JE

Moody, NR

机构：

[1] Sandia Natl Labs, Livermore, CA 94551 USA

[2] Univ Connecticut, Inst Mat Sci, Ctr Mat Simulat, Storrs, CT 06269 USA

[3] Seagate Technol, Bloomington, MN 55420 USA

来源：

关键词：

D O I：

10.1088/0965-0393/5/6/007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The embedded atom method (EAM) potentials for the Ni/Al/H system as previously published contain errors. The corrected potentials are presented here.

引用

页码：651 / 652

页数：2