The effect of diamond surface termination species upon field emission properties

被引:43
作者
May, PW
Stone, JC
Ashfold, MNR
Hallam, KR
Wang, WN
Fox, NA
机构
[1] Univ Bristol, Sch Chem, Bristol BS8 1TS, Avon, England
[2] Univ Bristol, Interface Anal Ctr, Bristol BS2 8BS, Avon, England
[3] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
关键词
diamond films; field emission; surface dipole; surface treatments;
D O I
10.1016/S0925-9635(97)00181-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped CVD diamond films on Si substrates have been chemically treated in order to change the surface termination species. Treatments used include hydrogenation, deuteration, oxidation, hydrolysis, amination, chlorination, fluorination, and metallisation, using Na, K and Cs layers. The effect of these treatments upon field emission characteristics has been measured. In general, it is found that emission currents increase and threshold voltages decrease as the electronegativity of the surface species decreases. The best field emission properties were observed for the films with metal layers, with threshold voltages of similar to 15 V/mu m. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:671 / 676
页数:6
相关论文
共 21 条
[1]   Chemical modification of diamond surfaces using a chlorinated surface as an intermediate state [J].
Ando, T ;
NishitaniGamo, M ;
Rawles, RE ;
Yamamoto, K ;
Kamo, M ;
Sato, Y .
DIAMOND AND RELATED MATERIALS, 1996, 5 (10) :1136-1142
[2]   Direct interaction of elemental fluorine with diamond surfaces [J].
Ando, T ;
Yamamoto, K ;
Matsuzawa, M ;
Takamatsu, Y ;
Kawasaki, S ;
Okino, F ;
Touhara, H ;
Kamo, M ;
Sato, Y .
DIAMOND AND RELATED MATERIALS, 1996, 5 (09) :1021-1025
[3]   Influence of surface modifications on the electronic properties of CVD diamond films [J].
Bachmann, PK ;
Eberhardt, W ;
Kessler, B ;
Lade, H ;
Radermacher, K ;
Wiecher, DU ;
Wilson, H .
DIAMOND AND RELATED MATERIALS, 1996, 5 (11) :1378-1383
[4]  
Bell, 1973, NEGATIVE ELECT AFFIN
[5]   Electron emission measurements from CVD diamond surfaces [J].
Bozeman, SP ;
Baumann, PK ;
Ward, BL ;
Powers, MJ ;
Cuomo, JJ ;
Nemanich, RJ ;
Dreifus, DL .
DIAMOND AND RELATED MATERIALS, 1996, 5 (6-8) :802-806
[6]   Photoelectron emission from the cesiated diamond (110) surface [J].
Fox, CA ;
Kelly, MA ;
Hagstrom, SB ;
Cao, R ;
Vergara, G ;
Pianetta, P ;
Pan, LS ;
Hsu, WL .
DIAMOND FOR ELECTRONIC APPLICATIONS, 1996, 416 :449-454
[7]  
GEIS MW, 1995, APPL PHYS LETT, V67, P9
[8]   QUANTUM PHOTOYIELD OF DIAMOND(111) - STABLE NEGATIVE-AFFINITY EMITTER [J].
HIMPSEL, FJ ;
KNAPP, JA ;
VANVECHTEN, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 20 (02) :624-627
[9]   CALCULATION OF ELECTRON FIELD-EMISSION FROM DIAMOND SURFACES [J].
HUANG, ZH ;
CUTLER, PH ;
MISKOVSKY, NM ;
SULLIVAN, TE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :526-530
[10]  
HUANG ZH, 1996, APPL PHYS LETT, V65, P2526