Model experiments on fatigue of Pb(Zr0.53Ti0.47)O3 ferroelectric thin films

With an n-type or p-type semiconductor as a top electrode in contact with ferroelectric Pb(Zr0.53Ti0.47)O-3 thin film, polarization fatigue has been studied to investigate the effect of charge carrier injection. Electron injection is shown to be con-elated with fatigue while hole injection is not. Current blocking by an insulating SiO2 layer prevents fatigue as well. The enhanced mobility of oxygen vacancies, partially de-ionized by association with the injected electrons, is proposed to be the mechanism for the electron effect. (C) 1998 American Institute of Physics.