RM3 integration of InP based 1.55 gm P-i-N photodetectors with silicon CMOS optical clock distribution circuits

被引：2

作者：

Atmaca, E ^{[1
]}

Lei, V ^{[1
]}

Teo, M ^{[1
]}

Drego, N ^{[1
]}

Boning, D ^{[1
]}

Fonstad, CG ^{[1
]}

Khai, LW ^{[1
]}

Fatt, YS ^{[1
]}

机构：

[1] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

来源：

2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ISCSPC.2003.1354455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recess mounting with monolithic metallization, or RM3 integration, is being developed to integrate III-V photodiodes on silicon CMOS circuits for optical clock distribution applications. In RM3 integration, partially processed heterostructure devices are placed in recesses formed in the dielectric layers covering the Surface of an integrated circuit chip, the surface is planarized, and monolithic processing is continued to transform the heterostructures into optoelectronic devices monolithically integrated with the underlying circuitry.

引用

页码：204 / 209

页数：6