Direct observation of trapped carriers in polydiacetylene films by optical second harmonic generation

被引：21

作者：

Manaka, Takaaki ^{[1
]}

Kohn, Hideki ^{[1
]}

Ohshima, Yuki ^{[1
]}

Lim, Eunju ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 17期

关键词：

Bias voltage - Electric field effects - Electrodes - Field effect transistors - Harmonic generation - Polymer films;

D O I：

10.1063/1.2734469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Trapped carriers in polydiacetylene (PDA) films were directly observed by the electric field induced second harmonic generation (EFISHG) using field effect transistor (FET) structure. Response of EFISHG signal from PDA-FET with applying voltage depended strongly on the polarity of gate voltage. For negative bias, which promotes hole injection from source electrode, EFISHG signal was not observed during bias application, whereas it was enhanced after turning off the bias. Electric field formed by trapped holes in PDA activated the EFISHG signal for the negative bias condition. (c) 2007 American Institute of Physics.

引用

页数：3

共 14 条

[1] Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation [J].