Reversible sidewall osmylation of individual carbon nanotubes

被引：28

作者：

Cui, JB ^{[1
]}

Burghard, M ^{[1
]}

Kern, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

NANO LETTERS | 2003年 / 3卷 / 05期

关键词：

D O I：

10.1021/nl034135p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Sidewall osmylation of individual metallic single-walled carbon nanotubes has been achieved by exposing the tubes to osmium tetroxide vapor under UV photoirradiation. The covalent attachment of the osmium oxide leads to an increase in the electrical resistance by up to several orders of magnitude. The cycloaddition product can be cleaved by UV light in vacuum or under an oxygen atmosphere, whereby the original resistance is restored.

引用

页码：613 / 615

页数：3

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