A novel high-density low-cost Diode Programmable Read Only Memory

被引：9

作者：

deGraaf, C

Woerlee, PH

Hart, CM

Lifka, H

deVreede, PWH

Janssen, PJM

Sluijs, FJ

Paulzen, GM

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new stand-alone Diode Programmable Read Only Memory (DPROM) technology for one-time-programmable memories is presented. The technology features small cell size and low mask count. The memory function is based on the formation of a diode-antifuse by gate oxide breakdown. The functionality of DPROM circuits is demonstrated and the program, read and reliability characteristics are discussed.

引用

页码：189 / 192

页数：4