Conductance quantization above 30 K in GaAlAs shallow-etched quantum point contacts smoothly joined to the background 2DEG

被引：79

作者：

Kristensen, A

Jensen, JB

Zaffalon, M

Sorensen, CB

Reimann, SM

Lindelof, PE

Michel, M

Forchel, A

机构：

[1] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 01期

关键词：

D O I：

10.1063/1.366724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of shallow etched GaAs/GaAlAs quantum point contacts (QPCs) of various shapes have been studied as a function of temperature above 0.3 K. Quantized conductance was observed up to 36 K, and from the temperature dependence of the conductance staircase we find energy separations between the lowest one-dimensional subbands up to 20 meV. This value exceeds the highest values so far reported for laterel QPC constrictions in GaAs/GaAlAs heterostructures. In addition, very well behaved quantized conductance plateaus were observed at the lowest temperatures. (C) 1998 American Institute of Physics.

引用

页码：607 / 609

页数：3

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