Transport and defect mechanisms in cuprous delafossites.: 2.: CuScO2and CuYO2

被引:101
作者
Ingram, BJ
Harder, BJ
Hrabe, NW
Mason, TO [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
关键词
D O I
10.1021/cm048982k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The delafossite structure (ABO(2)) accommodates a wide range of transition and rare-earth cations on the B-site in combination with a short list of A-site cations. This paper reports the effects on defect chemistry and transport as a function of the B-Site cation in copper-based delafossite materials, with CuScO2 and CuYO2) as examples. Large B-site cation delafossites exhibit small polaron conduction, a diffusion-limited conduct-ion mechanism, ;ith an activation energy approximately twice that of GuAlO(2), (0.22 eV vs 0.14 eV, respectively). The mobility for these materials is found to be <1 cm(2) V-1 s(-1) further evidence of small polaron conduction. The majority defect species is highly dependent, on the B-Site cation, such that CuScO2 and CuYO2 are dominated by extrinsic defects (acceptor doping) and free oxygen interstitials, whereas off-stoichiometry dominates CuAlO2. Dopant solubility is shown to be 1% for bulk CuScO2 samples and lower in CuYO2.
引用
收藏
页码:5623 / 5629
页数:7
相关论文
共 28 条
[1]   OPTO-ELECTRONIC PROPERTIES OF CUALO2 [J].
BENKO, FA ;
KOFFYBERG, FP .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1984, 45 (01) :57-59
[2]   THE OPTICAL BANDGAP AND BAND-EDGE POSITIONS OF SEMICONDUCTING P-TYPE CUYO2 [J].
BENKO, FA ;
KOFFYBERG, FP .
CANADIAN JOURNAL OF PHYSICS, 1985, 63 (10) :1306-1308
[3]   LACUO2.5+X AND YCUO2.5+X DELAFOSSITES - MATERIALS WITH TRIANGULAR CU2+DELTA PLANES [J].
CAVA, RJ ;
ZANDBERGEN, HW ;
RAMIREZ, AP ;
TAKAGI, H ;
CHEN, CT ;
KRAJEWSKI, JJ ;
PECK, WF ;
WASZCZAK, JV ;
MEIGS, G ;
ROTH, RS ;
SCHNEEMEYER, LF .
JOURNAL OF SOLID STATE CHEMISTRY, 1993, 104 (02) :437-452
[4]  
COTTON FA, 1988, ADV INORG CHEM, P495
[5]  
DUAN N, 2000, APPL PHYS LETT, V77, P1
[6]   Preparation of CuAlO2 nanocrystalline transparent thin films with high conductivity [J].
Gao, SM ;
Zhao, Y ;
Gou, PP ;
Chen, N ;
Xie, Y .
NANOTECHNOLOGY, 2003, 14 (05) :538-541
[7]   Structure of LaCuO2.66:: an oxidized delafossite compound containing hole-doped kagome planes of Cu2+ cations [J].
Garlea, O ;
Darie, C ;
Bougerol, C ;
Isnard, O ;
Bordet, P .
SOLID STATE SCIENCES, 2003, 5 (08) :1095-1104
[8]   Nanocrystalline p-type transparent Cu-Al-O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors [J].
Gong, H ;
Wang, Y ;
Luo, Y .
APPLIED PHYSICS LETTERS, 2000, 76 (26) :3959-3961
[9]  
Hong BS, 1997, KEY ENG MATER, V125-1, P163, DOI 10.4028/www.scientific.net/KEM.125-126.163
[10]   Transport and defect mechanisms in cuprous delafossites.: 1.: Comparison of hydrothermal and standard solid-state synthesis in CuAlO2 [J].
Ingram, BJ ;
González, GB ;
Mason, TO ;
Shahriari, DY ;
Barnabe, A ;
Ko, DG ;
Poeppelmeier, KR .
CHEMISTRY OF MATERIALS, 2004, 16 (26) :5616-5622