Numerical studies of variable-range hopping in one-dimensional systems

被引：17

作者：

Rodin, A. S. ^{[1
]}

Fogler, M. M. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 15期

关键词：

GAAS-SI WIRES; CONDUCTANCE FLUCTUATIONS; EFFECTIVE TEMPERATURE; CONDUCTIVITY; FIELD; TRANSPORT; LOCALIZATION; STATISTICS; TRANSITION; ELECTRONS;

D O I：

10.1103/PhysRevB.80.155435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hopping transport in a one-dimensional system is studied numerically. A fast algorithm is devised to find the lowest-resistance path at arbitrary electric field. Probability distribution functions of individual resistances on the path and the net resistance are calculated and fitted to compact analytic formulas. Qualitative differences between statistics of resistance fluctuations in Ohmic and non-Ohmic regimes are elucidated. The results are compared with prior theoretical and experimental work on the subject.

引用

页数：12

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