Dependence of upper critical field and pairing strength on doping in cuprates

被引：178

作者：

Wang, YY

Ono, S

Onose, Y

Gu, G

Ando, Y

Tokura, Y

Uchida, S

Ong, NP ^{[1
]}

机构：

[1] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[2] Elect Power Ind, Cent Res Inst, Tokyo 2018511, Japan

[3] Japan Sci & Technol, Spin Superstruct Project, Tsukuba, Ibaraki 3058562, Japan

[4] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA

[5] Univ Tokyo, Sch Frontier Sci, Tokyo 1138656, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

SCIENCE | 2003年 / 299卷 / 5603期

关键词：

D O I：

10.1126/science.1078422

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We have determined the upper critical field H-c2 as a function of hole concentration in bismuth-based cuprates by measuring the voltage induced by vortex flow in a driving temperature gradient (the Nernst effect), in magnetic fields up to 45 tesla. We found that H-c2 decreased steeply as doping increased, in both single and bilayer cuprates. This relationship implies that the Cooper pairing potential displays a trend opposite to that of the superfluid density versus doping. The coherence length of the pairs xi(0) closely tracks the gap measured by photoemission. We discuss implications for understanding the doping dependence of the critical temperature T-c0.

引用

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页码：86 / 89

页数：5

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