1/f noise in anisotropic and giant magnetoresistive elements

被引:47
作者
van de Veerdonk, RJM
Belien, PJL
Schep, KM
Kools, JCS
de Nooijer, MC
Gijs, MAM
Coehoom, R
de Jonge, WJM
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands
[3] Delft Univ Technol, Fac Appl Phys, NL-2628 CJ Delft, Netherlands
[4] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
[5] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
D O I
10.1063/1.366533
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microfabricated magnetoresistive elements based on either the anisotropic or the giant magnetoresistance effect were tested for their frequency dependent resistance noise behavior at room temperature in a de magnetic field, using a de sense current. Thermal resistance noise was the dominant noise source above about 10 kHz, At low frequencies the resistance noise was found to be dominated by a 1/f contribution that depends on the applied magnetic field. The 1/f noise is relatively low and field independent when the element is in a saturated state and contains a relatively large and field dependent excess contribution when the magnetic field is in the sensitive field range of the element. The 1/f noise level observed in saturation is comparable to the 1/f noise level found in nonmagnetic metals; the excess noise has a magnetic origin. The variation of the excess noise level with the applied de magnetic field can be explained qualitatively using a simple model based on thermal excitations of the magnetization direction, (C) 1997 American Institute of Physics.
引用
收藏
页码:6152 / 6164
页数:13
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