Drain current DLTS of normally-off AlGaN/GaN HEMTs

被引：11

作者：

Mizutani, T. ^{[1
,2
]}

Kawano, A. ^{[1
]}

Kishimoto, S. ^{[1
,3
]}

Maeazawa, K. ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Furo Cho, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Inst Adv Res, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Venture Business Lab, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS VOL 4, NO 4 | 2007年 / 4卷 / 04期

关键词：

D O I：

10.1002/pssc.200674155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been demonstrated that the drain current DLTS is effective in characterizing the transient behavior of the normally-off AlGaN/GaN HEMTs in which the conventional capacitance DLTS cannot be applied because the carriers in the channel are depleted in the normal bias condition. In the measurement, two bulk/interface-related negative peaks and one surface-state-related positive peak were observed. Drain voltage dependence was also discussed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1536 / +

页数：2

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