Investigation of the internal amplification effect on planar (p+-n-n+) structures made of high-resistivity silicon

被引：4

作者：

Golubkov, SA

Gurov, YB

Gusev, KN

Egorov, NN

Zamyatin, NI

Katulina, SL

Kozlov, YF

Kon'kov, KA

Sandukovsky, VG

Sidorov, AI

Starostin, AS

机构：

[1] Joint Inst Nucl Res, Dubna 1411980, Moscow Oblast, Russia

[2] Res Inst Mat Sci & Technol, Zelenograd, Russia

[3] Moscow Engn Phys Inst, Moscow 115409, Russia

[4] Inst Theoret & Expt Phys, Moscow 117259, Russia

来源：

INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 2004年 / 47卷 / 06期

关键词：

D O I：

10.1023/B:INET.0000049703.01596.be

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first results of studies of special strip and pixel silicon detectors are presented. The detector structures allow the creation of high electrical fields (5 x 10(5) V/cm) near p-n junctions that are powerful enough to initiate an avalanche multiplication of charge carriers. The possibility of internal amplification in a semiconductor detector similar to the proportional amplification in gas counters is shown. The spectrum of a particles from Pu-238 (E-alpha = 5.5 MeV) demonstrates an "amplified" peak at an energy of 70.2 MeV and an energy resolution FWHM = 10.2 MeV.

引用

页码：799 / 808

页数：10

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