Coherence-collapse threshold of 1.3-μm semiconductor DFB lasers

被引:17
作者
Grillot, F [1 ]
Thedrez, V
Gauthier-Lafaye, O
Martineau, MF
Voiriot, V
Lafragette, JL
Gentner, JL
Silvestre, L
机构
[1] ALCATEL, OPTO, Alcatel Res & Innovat, F-91460 Marcoussis, France
[2] Alcatel Aoptron, F-91625 Nozay, France
关键词
coherence collapse; distributed-feedback lasers; external optical feedback; facet phase effects; transmission;
D O I
10.1109/LPT.2002.805771
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The onset of the coherence-collapse threshold is theoretically and experimentally studied for monomode 1.3-mum antireflection/high reflection distributed-feedback lasers taking into account facet phase effects. The variation of the coherence collapse from chip to chip due to the facet phase is in the range of 7 dB and remains almost independent of the grating coefficient. Lasers that operate without coherence collapse under - 15-dB optical feedback, while exhibiting an efficiency as high as 0.30 W/A, are demonstrated. Such lasers are adequate for 2.5Gb/s transmission without isolator. under the International Telecommunication Union recommended return loss.
引用
收藏
页码:9 / 11
页数:3
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