Intersubband electroluminescence in GaAs/AlGaAs quantum cascade structures

被引：9

作者：

Li, YB ^{[1
]}

Cockburn, JW

Skolnick, MS

Birkett, MJ

Duck, JP

Grey, R

Hill, G

机构：

[1] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Cent Facil III V Mat, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 22期

关键词：

semiconductor superlattices; semiconductor lasers; electroluminescence; aluminium gallium arsenide;

D O I：

10.1049/el:19971209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first observation of intersubband electroluminescence in GaAs/A/GaAs-based quantum cascade structures. A 100 Angstrom Al0.15Ga0.85As/Al0.4As well is employed to bridge the individual active regions to enhance the overall quantum efficiency, thus greatly simplifying the design and growth of quantum cascade structures.

引用

页码：1874 / 1875

页数：2

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