Synthesis and fabrication of high-performance n-type silicon nanowire transistors

被引：392

作者：

Zheng, GF ^{[1
]}

Lu, W ^{[1
]}

Jin, S ^{[1
]}

Lieber, CM ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Chem Biol, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 21期

关键词：

D O I：

10.1002/adma.200400472

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single crystal n-type silicon nanowires (SiNWs) with controlled phosphorus dopant concentrations have been successfully synthesized for the first time (see Figure). Field-effect transistor (FET) devices fabricated from these n-SiNWs exhibit good device properties, with mobilities more than 100 times greater than previous reports, and comparable to high-performance planar silicon FETs.

引用

页码：1890 / +

页数：5

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