Coherent longitudinal optical phonon and plasmon coupling in the near-surface region of InN

被引:20
作者
Chang, YM [1 ]
Chuang, CT
Chia, CT
Tsen, KT
Lu, H
Schaff, WJ
机构
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1830077
中图分类号
O59 [应用物理学];
学科分类号
摘要
Coherent phonon spectroscopy of a high-quality InN epitaxial layer is carried out using time-resolved second-harmonic generation. A coherent longitudinal optical phonon and plasmon coupling mode only at 447 cm(-1) can be resolved in the spectrum. Its frequency shows no dependence on the photoinjected carrier density up to 1.5x10(19) cm(-3). This phenomenon is attributed to the hybridization of a coherent A(1)(LO) phonon with the intrinsic cold plasma accumulated in the near-surface region of InN, where the plasma density could reach on the order of 10(20) cm(-3), much higher than the bulk carrier concentration 1x10(18) cm(-3) determined by Hall effect measurement. (C) 2004 American Institute of Physics.
引用
收藏
页码:5224 / 5226
页数:3
相关论文
共 21 条
[1]   Indium nitride (InN): A review on growth, characterization, and properties [J].
Bhuiyan, AG ;
Hashimoto, A ;
Yamamoto, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808
[2]   Observation of coherent surface optical phonon oscillations by time-resolved surface second-harmonic generation [J].
Chang, YM ;
Xu, L ;
Tom, HWK .
PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4649-4652
[3]   Time-resolved spectroscopy of recombination and relaxation dynamics in InN [J].
Chen, F ;
Cartwright, AN ;
Lu, H ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 2003, 83 (24) :4984-4986
[4]   Generation and relaxation of coherent majority plasmons [J].
Cho, GC ;
Dekorsy, T ;
Bakker, HJ ;
Hovel, R ;
Kurz, H .
PHYSICAL REVIEW LETTERS, 1996, 77 (19) :4062-4065
[5]   Experimental and theoretical studies of phonons in hexagonal InN [J].
Davydov, VY ;
Emtsev, VV ;
Goncharuk, IN ;
Smirnov, AN ;
Petrikov, VD ;
Mamutin, VV ;
Vekshin, VA ;
Ivanov, SV ;
Smirnov, MB ;
Inushima, T .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3297-3299
[6]  
Dekorsy T, 2000, TOP APPL PHYS, V76, P169
[7]   Coherent THz phonons driven by light pulses and the Sb problem: What is the mechanism? [J].
Garrett, GA ;
Albrecht, TF ;
Whitaker, JF ;
Merlin, R .
PHYSICAL REVIEW LETTERS, 1996, 77 (17) :3661-3664
[8]   Dynamics of coherent phonons in bismuth generated by ultrashort laser pulses [J].
Hase, M ;
Mizoguchi, K ;
Harima, H ;
Nakashima, S ;
Sakai, K .
PHYSICAL REVIEW B, 1998, 58 (09) :5448-5452
[9]   Optical properties of Si-doped InN grown on sapphire (0001) [J].
Inushima, T ;
Higashiwaki, M ;
Matsui, T .
PHYSICAL REVIEW B, 2003, 68 (23)
[10]   Light scattering by a multicomponent plasma coupled with longitudinal-optical phonons: Raman spectra of p-type GaAs:Zn [J].
Irmer, G ;
Wenzel, M ;
Monecke, J .
PHYSICAL REVIEW B, 1997, 56 (15) :9524-9538