Giant magnetoresistance in RENiSb semiconductors (RE = Tb, Dy, Ho)

被引：35

作者：

Pierre, J

Karla, I

机构：

[1] CNRS, Lab L NEEL, F-38042 Grenoble 9, France

[2] Univ Osnabruck, D-49069 Osnabruck, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 217卷 / 1-3期

关键词：

magnetic semiconductors; variable range hopping; giant magnetoresistance;

D O I：

10.1016/S0304-8853(00)00319-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A giant magnetoresistance is observed at low temperatures in RENiSb semiconductors, and is studied as function of held and temperature. The magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, the proportionality factor depending on the amplitude of the resistivity itself and being higher for a low carrier density. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：74 / 82

页数：9

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