Refractive index profiles of planar optical waveguides in β-BBO produced by silicon ion implantation

被引：9

作者：

Wang, XL ^{[1
]}

Chen, F

Lu, F

Fu, G

Li, SL

Wang, KM

Lu, QM

Shen, DY

Ma, HJ

Nie, R

机构：

[1] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China

[2] Shandong Univ, Sch Chem & Chem Engn, Jinan 250100, Peoples R China

[3] Peking Univ, Dept Tech Phys, Minist Educ, Beijing 100871, Peoples R China

[4] Peking Univ, Key Lab Heavy Ion Phys, Minist Educ, Beijing 100871, Peoples R China

来源：

OPTICAL MATERIALS | 2004年 / 27卷 / 03期

基金：

中国国家自然科学基金;

关键词：

optical waveguides; ion implantation; BBO; refractive index profile;

D O I：

10.1016/j.optmat.2004.03.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The planar waveguides have been fabricated in z-cut beta barium metaborate crystals by 2.8 MeV Si+ ion implantation with doses of 1 X 10(15) and 3 x 10(15) ions/cm(2) at room temperature. The waveguides were characterized by the prism-coupling method. The refractive index profiles were reconstructed using reflectivity calculation method. It is found that relatively large positive changes of extraordinary refractive indices happen in the guiding regions, and the negative changes of ordinary refractive indices happen at the end of the track. TRIM'98 (transport of ions in matter) code was used to simulate the damage profile in beta-BBO by 2.8MeV Si+ ion implantation. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：459 / 463

页数：5

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