High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

In this work, we studied etching of resists suitable for nano-imprint lithography. First, various resists have been tested in a SiO2 process under low pressure and high plasma density conditions in order to get the best SiO2/resist selectivity. Second, to understand resist etching mechanism and thus optimize the process, we focused our study on polymer etching behavior in different plasma conditions. Finally, transfer of imprinted features in SiO2 has been successfully achieved.