Theory of imbalanced electron-hole transport in conjugated polymers

被引：15

作者：

Meng, HF ^{[1
]}

Chen, YS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.70.115208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron-hole symmetry in conjugated polymers is found to exist in not only the band structure but also the defect levels caused by structure disorder. The commonly observed higher hole mobility is explained by (1) the compensation of the hole traps by the unintentional background p doping; and (2) the electron traps caused by oxidation. Higher electron mobility in N and O containing conjugated polymers is also explained. Carrier mobility is calculated as a function of doping condition and electric field. Balanced electron-hole transport is shown to be achievable by intentional n doping.

引用

页码：115208 / 1

页数：5

共 21 条

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