Degradation of MOSFETs drive current due to halo ion implantation

In this paper, we have evaluated the performance of halo MOSFET with wide range of process conditions. We found that halo devices indeed improve the short channel effect such as V-th roll-off, DIBL, and punch-through voltage. However, similar to super steep retrograde channel device, it causes significant degradation of the current driving capability. We found that the degradation of saturation current of halo device is directly related to the less roll-off of saturation threshold voltage due to the increased depletion charge at the drain.