Influence of CdS/CdTe interface properties on the device properties

被引：14

作者：

Dhere, R ^{[1
]}

Rose, D ^{[1
]}

Albin, D ^{[1
]}

Asher, S ^{[1
]}

Al-Jassim, M ^{[1
]}

Cheong, H ^{[1
]}

Swartzlander, A ^{[1
]}

Moutinho, H ^{[1
]}

Coutts, T ^{[1
]}

Ribelin, R ^{[1
]}

Sheldon, P ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654121

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, we have focused on the formation and the role of the CdS/CdTe interface on CdTe solar cells. The devices were made using chemical bath deposited (CBD) CdS on SnO2/glass substrates and the CdTe was deposited by close spaced sublimation (CSS) and subsequently CdCl2 treated and annealed. Compositional analysis showed considerable interdiffusion of Te and S as well as CI accumulation at the interface. Micro-photoluminescence (PL) analysis reveals sulfur accumulation at the grain boundaries and a graded CdSxTe1-x alloy at the interface. Our analysis leads us to conclude that CI accumulation and anion vacancies result in a one sided n(+)-p junction. This model could explain the collection loss in the CdS layer, seen in the spectral response of CdS/CdTe devices.

引用

页码：435 / 438

页数：4