共 16 条
Compensating electrostatic forces by single-scan Kelvin probe force microscopy
被引:47
作者:

Ziegler, Dominik
论文数: 0 引用数: 0
h-index: 0
机构: ETH, Nanotechnol Grp, CH-8092 Zurich, Switzerland

Rychen, Joerg
论文数: 0 引用数: 0
h-index: 0
机构: ETH, Nanotechnol Grp, CH-8092 Zurich, Switzerland

Naujoks, Nicola
论文数: 0 引用数: 0
h-index: 0
机构: ETH, Nanotechnol Grp, CH-8092 Zurich, Switzerland

Stemmer, Andreas
论文数: 0 引用数: 0
h-index: 0
机构: ETH, Nanotechnol Grp, CH-8092 Zurich, Switzerland
机构:
[1] ETH, Nanotechnol Grp, CH-8092 Zurich, Switzerland
[2] Nanonis GmbH, CH-8005 Zurich, Switzerland
关键词:
D O I:
10.1088/0957-4484/18/22/225505
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We describe a novel method of single-scan Kelvin probe force microscopy, operating simultaneously with amplitude-modulation distance control in ambient air. A separate Kelvin probe feedback control loop compensates for potential differences between tip and sample by minimizing electrostatic forces. As a result, electrostatically induced height errors in topography are automatically cancelled. To prevent crosstalk from topography or errors in distance control, the Kelvin probe feedback employs phase information resulting from a combination of mechanical and electrical excitation of the cantilever at its second flexural eigenmode. The feedback for amplitude-modulation distance control operates as usual close to the first eigenfrequency.
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