Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer

被引：4

作者：

Bel'kov, VV ^{[1
]}

Zhilyaev, YV ^{[1
]}

Mosina, GN ^{[1
]}

Raevskii, SD ^{[1
]}

Sorokin, LM ^{[1
]}

Shcheglov, MP ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF THE SOLID STATE | 2000年 / 42卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1309437

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structure of bulk GaN layers grown on (0001) sapphire substrates by vapor-phase epitaxy has been studied by x-ray diffraction and transmission electron microscopy (TEM). It is found that these layers contain grown-in and screw dislocations. The dislocation density decreases away from the interface. The effect of an amorphous buffer layer on the formation of the initial GaN layer and, thus, on the degree of perfection of gallium nitride layers is elucidated. A model of generating grown-in dislocations and the relaxation mechanism of misfit stresses are proposed. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：1606 / 1609

页数：4

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