Homogeneous Al2O3 multilayer structures with reinforced mechanical stability for high-performance and high-throughput thin-film encapsulation

被引：8

作者：

Choi, Yun-Hyuk ^{[1
]}

Lee, Young Gu ^{[1
]}

Bulliard, Xavier ^{[1
]}

Lee, Kwang-Hee ^{[1
]}

Lee, Sangyoon ^{[1
]}

Choi, Dukhyun ^{[1
]}

Park, Jong-Jin ^{[2
]}

Kim, Jong Min ^{[2
]}

机构：

[1] Samsung Adv Inst Technol, Display Lab, Yongin 446712, Gyeonggi, South Korea

[2] Samsung Adv Inst Technol, Frontier Res Lab, Yongin 446712, Gyeonggi, South Korea

来源：

SCRIPTA MATERIALIA | 2010年 / 62卷 / 07期

关键词：

Multilayer thin films; Sputtering; Amorphous oxides; Internal stresses; Gas barrier; OXIDE-FILMS; BARRIER;

D O I：

10.1016/j.scriptamat.2009.12.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Homogeneous multilayered barrier films were fabricated by means of reactive and nonreactive sputtering of Al2O3. Homogeneous multilayer structures were seen to possess superior mechanical stability than single-layered films. The multilayer films presented 50% improved barrier performance and the fabrication process was 40% faster compared with single Al2O3 layers of the same thickness. The water vapor transmission rate was enhanced up to the order of 10(-4) g m(-2) day(-1) from a three-pair system of reactive and nonreactive sputtered Al2O3 bilayers. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：447 / 450

页数：4

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