Mask patterning challenges for device fabrication below 100 nm

被引:3
作者
Gesley, M [1 ]
机构
[1] Etec Syst Inc, Hayward, CA 94545 USA
关键词
D O I
10.1016/S0167-9317(98)00004-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mask pattern generation, pattern transfer processes, and inspection and repair will be critical factors influencing progress in nanolithography. By identifying the lithography trends driving mask-patterning issues, it is possible to define the future challenges the technology will be facing to enable semiconductor device fabrication at and below the 100 nm device generation. This paper offers a roadmap of potential solutions that would enable advanced mask technology. It also identifies several topics accessible to universities and other organizations focused on precompetitive research, which are complementary to the aims of industrial development of semiconductor technology.
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页码:7 / 14
页数:8
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