Fabrication of single electron memory on atomically flat α-Al2O3 substrate made by AFM nano-oxidation process

被引：3

作者：

Matsumoto, K ^{[1
]}

Gotoh, Y ^{[1
]}

Shirakashi, J ^{[1
]}

Maeda, T ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single electron transistor and the single electron memory with the planar structure were fabricated for the first time using the narrow oxidized Nb wires as tunneling junctions on the atomically flat niobium(Nb) metal surface that was on the atomically flat alpha-Al2O3 (1012) surface. The narrow oxidized Nb wires were formed using the AFM cantilever as an ultra-fine cathode(1)). Owing to the atomically flat surface of the Nb metal, the uniformity and reproducibility of the oxidized line width and space, such as 10-15nm were greatly enhanced and therefore the complicated tunnel junction structure for the memory could be fabricated.

引用

页码：155 / 158

页数：4