Thin films and nanowires of molecule-based conductors and magnets

被引：8

作者：

Cassoux, P ^{[1
]}

de Caro, D ^{[1
]}

Valade, L ^{[1
]}

Casellas, H ^{[1
]}

Roques, S ^{[1
]}

Legros, JP ^{[1
]}

机构：

[1] CNRS, Chim Coordinat Lab, Equipe Precurseurs & Mat, F-31077 Toulouse 04, France

来源：

SYNTHETIC METALS | 2003年 / 133卷

关键词：

molecular conductors; molecular magnets; chemical vapor deposition; nanowires; thin films;

D O I：

10.1016/S0379-6779(02)00397-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanowires of tetrathiafulvalene (TTF)[Ni(dmit)(2)](2) (dmit(2-): 2-thioxo-1,3-dithiole-4,5-dithiolato) are obtained by successively dipping SSCC in acetonitrile solutions of (Bu4N)[Ni(dmit)(2)] and (TTF)(3)(BF4)(2), observed by S.E.M. and AFM, and characterized by Raman micro-probe. Thin films of (TTF)[Ni(dmit)(2)](2) are obtained by the same process but using a new original silicon conversion coating (SiCC). The deposit is observed by S.E.M., and characterized by Raman micro-probe and transport measurements. TTF-tetracyanoquino-dimethane (TCNQ) individual nanowires and (TTF)[Ni(dmit)(2)](2) nano-needles scattered on the surface of the substrate or aggregated in wads, are obtained by the dipping process on oxide-free micro-rough silicon (O-f.Mr.Si). Adherent thin films of the V(TCNE)(2) (TCNE: tetracyanoethylene) magnet are deposited on (O-f.Mr.Si) substrates by chemical vapor deposition from bis(benzene)vanadiurn and TCNE as precursors. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：659 / 662

页数：4

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