Damping of oscillations in layer-by-layer growth

被引:19
作者
Kallabis, H
Brendel, L
Krug, J
Wolf, DE
机构
[1] Forschungszentrum Julich, HLRZ, D-52425 Julich, Germany
[2] Gerhard Mercator Univ, D-47048 Duisburg, Germany
[3] Univ Essen Gesamthsch, Fachbereich Phys, D-45117 Essen, Germany
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1997年 / 11卷 / 31期
关键词
D O I
10.1142/S0217979297001829
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a theory for the damping of layer-by-layer growth oscillations in molecular beam epitaxy. The surface becomes rough on distances larger than a layer coherence length which is substantially larger than the diffusion length. The damping time can be calculated by a comparison of the competing roughening and smoothening mechanisms. The dependence on the growth conditions, temperature and deposition rate, is characterized to be a power law. The theoretical results are confirmed by computer simulations.
引用
收藏
页码:3621 / 3634
页数:14
相关论文
共 36 条
[1]   UNIVERSALITY IN SURFACE GROWTH - SCALING FUNCTIONS AND AMPLITUDE RATIOS [J].
AMAR, JG ;
FAMILY, F .
PHYSICAL REVIEW A, 1992, 45 (08) :5378-5393
[2]  
[Anonymous], 1958, Z. Kristallogr
[3]  
[Anonymous], CURRENT TOPICS MAT A
[4]   TRANSITION TO MULTILAYER KINETIC ROUGHENING FOR METAL (100) HOMOEPITAXY [J].
BARTELT, MC ;
EVANS, JW .
PHYSICAL REVIEW LETTERS, 1995, 75 (23) :4250-4253
[5]  
BRENDEL L, 1994, THESIS U DUISBURG
[6]   THE SURFACE STATISTICS OF A GRANULAR AGGREGATE [J].
EDWARDS, SF ;
WILKINSON, DR .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1982, 381 (1780) :17-31
[7]   ATOMIC VIEW OF SURFACE SELF-DIFFUSION - TUNGSTEN ON TUNGSTEN [J].
EHRLICH, G ;
HUDDA, FG .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (03) :1039-&
[8]  
Family F., 1991, DYNAMICS FRACTAL SUR
[9]   Effect of monomer evaporation on a simple model of submonolayer growth [J].
Jensen, P ;
Larralde, H ;
Pimpinelli, A .
PHYSICAL REVIEW B, 1997, 55 (04) :2556-2569
[10]   SCALING ANALYSIS OF SURFACE-ROUGHNESS AND BRAGG OSCILLATION DECAY IN MODELS FOR LOW-TEMPERATURE EPITAXIAL-GROWTH [J].
KANG, HC ;
EVANS, JW .
SURFACE SCIENCE, 1992, 271 (1-2) :321-330