100,000% ballistic magnetoresistance in stable Ni nanocontacts at room temperature

被引：79

作者：

Hua, SZ ^{[1
]}

Chopra, HD ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Mech & Aerosp Engn, Thin Films & Nanosynth Lab, Mat Program, Buffalo, NY 14260 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.67.060401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reports reproducible, ten thousand to hundred thousand percent ballistic magnetoresistance (BMR) effect in stable electrodeposited Ni nanocontacts at room temperature and in fields of only a few hundred oersteds. Experimental observation of Ni whiskers and nanoconstrictions within these whiskers formed during electrodeposition points towards a picture of multiple ballistic, quasi-ballistic, and diffusive conductors acting in series and parallel to give rise to the observed large BMR effect, instead of a single, monolithic nanocontact.

引用

页数：4

共 13 条

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