Three dimensional crystallization simulation and recording layer thickness effect in phase change optical recording

被引:22
作者
Fan, ZH [1 ]
Laughlin, DE [1 ]
机构
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2B期
关键词
phase change optical recording; GeSbTe; crystallization simulation; thickness effects; 3-D crystallization model;
D O I
10.1143/JJAP.42.800
中图分类号
O59 [应用物理学];
学科分类号
摘要
The development of phase change optical recording requires better understanding of the crystallization kinetics of recording materials. Most of the existing simulation methods are based on two-dimensional crystallization models. In this work, we develop a new method to simulate the crystallization of phase change recording material in three dimensions. This method can be used to simulate the recording layer thickness effect on the crystallization. We first set up an isothermal model, to explain the recording layer thickness effect. With this model, the 3-D crystallization simulation shows a similar trend as experimental data in the literature. We also discuss the parameter selection for the simulation.
引用
收藏
页码:800 / 803
页数:4
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