0.12 μm optical lithography performances using an alternating DUV phase shift mask

被引:2
作者
Trouiller, Y
Buffet, N
Mourier, T
Schiavone, P
Quere, Y
机构
[1] CEAG, LETI, F-38054 Grenoble 09, France
[2] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France
关键词
D O I
10.1016/S0167-9317(98)00013-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Manufacturing the next generation of devices will demand lithographic capability in the sub 0.18 mu m range. The phase shift mask (PSM) is a key emerging technology thought to be extending 248 nm optical lithography. Using the Levenson PSM technique allows us to improve resolution by as much as 50% at gate level. This paper describes the lithographic performances of Shipley UV5 photoresist on SiOxNy BARC, using alternating PSM and an ASM/90 Deep UV stepper. CD measurement was done on OPAL 7830i metrology SEM. Results on sub 0.18 eta m design rules are presented : The first part concerns experimental conditions : masks, process conditions, anti-reflective substrates, etching and metrology are discussed. The second part concerns lithographic performances : process linearity from 0.12 mu m to 0.18 mu m, 0.12 mu m isolated line process latitudes of 7% Energy Latitude for 0.8 mu m DOF have been exhibited. Finally we try to evaluate proximity effect and the ultimate resolution of this technology.
引用
收藏
页码:61 / 64
页数:4
相关论文
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