Structure and electrical properties of multilayer PZT films prepared by sol-gel processing

被引：17

作者：

Miyazawa, K

Ito, K

Maeda, R

机构：

[1] Univ Tokyo, Sch Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

[2] Minist Int Trade & Ind, Agcy Ind Sci & Technol, Mech Engn Lab, Tsukuba, Ibaraki 305, Japan

来源：

CERAMICS INTERNATIONAL | 2000年 / 26卷 / 05期

关键词：

D O I：

10.1016/S0272-8842(99)00085-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Multilayer PZT(Zr:Ti = 52:48) films were prepared by the repeated process of spin-coating and firing at 600 degrees C of a PZT sol with various heating rates between 20 and 200 degrees C min(-1). Their structural and dielectric properties were examined. The multilayer film prepared with the heating rate of 50 degrees C min(-1) shows the highest dielectric constant and a smooth surface with no surface cracks. High-resolution TEM (HRTEM) observations of an as-deposited PZT film indicate nucleation of perovskite and pyrochlore crystals in the amorphous matrix. The perovskite crystals are found to form through the initial construction of {110} planes. (C) 2000 Elsevier Science Ltd acid Techna S.r.l. All rights reserved.

引用

页码：501 / 506

页数：6