New Type of Vacancy-Induced Localized States in Multilayer Graphene

被引：44

作者：

Castro, Eduardo V. ^{[1
,2
]}

Lopez-Sancho, Maria P. ^{[1
]}

Vozmediano, Maria A. H. ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Ctr Fis Porto, P-4169007 Oporto, Portugal

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 03期

关键词：

SUSPENDED GRAPHENE;

D O I：

10.1103/PhysRevLett.104.036802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate the existence of a new type of zero energy state associated with vacancies in multilayer graphene that has a finite amplitude over the layer with a vacancy and adjacent layers, and the peculiarity of being quasilocalized in the former and totally delocalized in the adjacent ones. In a bilayer, when a gap is induced in the system by applying a perpendicular electric field, these states become truly localized with a normalizable wave function. A transition from a localized to an extended state can be tuned by the external gate for experimentally accessible values of parameters.

引用

页数：4

共 20 条

[1]

ARNDT A, ARXIV09052945V1

[2] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[3] Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].

Castro, Eduardo V. ;

Novoselov, K. S. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Dos Santos, J. M. B. Lopes ;

Nilsson, Johan ;

Guinea, F. ;

Geim, A. K. ;

Castro Neto, A. H. .

PHYSICAL REVIEW LETTERS, 2007, 99 (21)

[4] Localized states at zigzag edges of bilayer graphene [J].

Castro, Eduardo V. ;

Peres, N. M. R. ;

Lopes dos Santos, J. M. B. ;

Castro Neto, A. H. ;

Guinea, F. .

PHYSICAL REVIEW LETTERS, 2008, 100 (02)

[5] Localized states at zigzag edges of multilayer graphene and graphite steps [J].

Castro, Eduardo V. ;

Peres, N. M. R. ;

dos Santos, J. M. B. Lopes .

EPL, 2008, 84 (01)

[6] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[7] Monovacancy-induced magnetism in graphene bilayers [J].

Choi, Sangkook ;

Jeong, Byoung Wook ;

Kim, Seungchul ;

Kim, Gunn .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (23)

[8] Approaching ballistic transport in suspended graphene [J].

Du, Xu ;

Skachko, Ivan ;

Barker, Anthony ;

Andrei, Eva Y. .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495

[9] Free-standing graphene at atomic resolution [J].

Gass, Mhairi H. ;

Bangert, Ursel ;

Bleloch, Andrew L. ;

Wang, Peng ;

Nair, Rahul R. ;

Geim, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (11) :676-681

[10] Electronic states and Landau levels in graphene stacks [J].

Guinea, F. ;

Castro Neto, A. H. ;

Peres, N. M. R. .

PHYSICAL REVIEW B, 2006, 73 (24)

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