Pop-in events induced by spherical indentation in compound semiconductors

被引：93

作者：

Bradby J.E. ^{[1
]}

Williams J.S. ^{[1
]}

Swain M.V. ^{[2
]}

机构：

[1] Dept. of Electron. Mat. Engineering, Res. Sch. of Phys. Sci./Engineering, Australian National University, Canberra

[2] Biomaterials Science Research Unit, Dept. of Mechanical/Mechatronic Eng., Faculty of Dentistry, Eveleigh

来源：

Journal of Materials Research | 2004年 / 19卷 / 1期

关键词：

D O I：

10.1557/jmr.2004.19.1.380

中图分类号：

学科分类号：

摘要：

Details of the elastic-plastic transitions in crystalline compound semiconductors have been examined using spherical indentation. Two cubic (InP and GaAs) and two hexagonally structured semiconductors (ZnO and GaN) have been studied. A series of indentations have been made in each material at a number of different loads. The resulting load-penetration curves exhibited one or more discontinuities on loading (so called pop-in events). The load at which the initial pop-in event occurred has been measured along with the corresponding indenter extension. The elastic and elastic-plastic response of each material to spherical indentation has been calculated and compared with the experiment. By taking the difference between the elastic and elastic-plastic penetration depths, it has been found that the pop-in extension at each load could be predicted for each material. The detailed deformation behavior of each of the materials during indentation has also been discussed. © 2004 Materials Research Society.

引用

页码：380 / 386

页数：6

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