Planar Er- and Yb-doped amplifiers and lasers

被引：24

作者：

Hübner J. ^{[1
]}

Guldberg-Kjaer S. ^{[1
]}

Dyngaard M. ^{[1
]}

Shen Y. ^{[2
]}

Thomsen C.L. ^{[2
]}

Balslev S. ^{[2
]}

Jensen C. ^{[2
]}

Zauner D. ^{[2
]}

Feuchter T. ^{[2
]}

机构：

[1] COM, Technical University of Denmark, Lyngby, Orsteds Plads, Byg. 345v

[2] CISILIAS, Lyngby, Orsteds Plads, Byg. 345v

来源：

Applied Physics B: Lasers and Optics | 2001年 / 73卷 / 5-6期

关键词：

Erbium - Insertion losses - Integrated circuits - Optical waveguides - Photosensitivity - Plasma enhanced chemical vapor deposition - Reactive ion etching - Semiconductor doping - Ytterbium;

D O I：

10.1007/s003400100697

中图分类号：

学科分类号：

摘要：

New results in erbium-doped planar waveguide amplifiers and lasers are presented. The waveguides are produced in silica-on-silicon technology using plasma-enhanced chemical vapor deposition. Waveguide propagation losses outside the erbium absorption band are improved to values below 0.05 dB/cm for a core-cladding index step of around 1.4%. Amplifier arrays show a net gain of more than 12 dB over the entire C-band.

引用

页码：435 / 438

页数：3

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