Heteroepitaxial growth of InAs on Si: A new type of quantum dot

被引：6

作者：

Cyrlin G.E. ^{[1
]}

Petrov V.N. ^{[1
]}

Dubrovskii V.G. ^{[1
]}

Samsonenko Yu.B. ^{[1
]}

Polyakov N.K. ^{[1
]}

Golubok A.O. ^{[1
]}

Masalov S.A. ^{[1
]}

Komyak N.I. ^{[1
]}

Ustinov V.M. ^{[2
]}

Egorov A.Yu. ^{[2
]}

Kovsh A.R. ^{[2
]}

Maximov M.V. ^{[2
]}

Tsatsul'nikov A.F. ^{[2
]}

Volovik B.V. ^{[2
]}

Zhukov A.E. ^{[2
]}

Kop'ev P.S. ^{[2
]}

Ledentsov N.N. ^{[2
]}

Alferov Zh.I. ^{[2
]}

Bimberg D. ^{[3
]}

机构：

[1] Inst. of Analytical Instrumentation, Russian Academy of Sciences

[2] A. F. Ioffe Physicotechnical Inst., Russian Academy of Sciences

[3] Inst. fur Festkorperperphysik, Technische Universität, Berlin

来源：

Semiconductors | 1999年 / 33卷 / 9期

基金：

俄罗斯基础研究基金会;

关键词：

Silicon; Electron Diffraction; Substrate Temperature; Growth Process; Molecular Beam Epitaxy;

D O I：

10.1134/1.1187815

中图分类号：

学科分类号：

摘要：

The mechanism for heteroepitaxial growth in the InAs/Si system is studied by reflection high-energy electron diffraction, scanning tunnelling microscopy, and photoluminescence. For certain growth conditions, InAs nanostructures are found to develop on the Si surface immediately during the growth process in the course of molecular beam epitaxy. The range of substrate temperatures that lead to formation of nanosized islands is determined. InAs quantum dots grown on a buffer Si layer with a silicon layer of thickness 50 nm grown on the top produced photoluminescence lines at a wavelength of 1.3 μ.m at 77 K and 1.6 μm at 300K. © 1999 American Institute of Physics. [S1063-7826(99)01009-1].

引用

页码：972 / 975

页数：3

共 11 条

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