Low-resistance Ti/Al ohmic contact on undoped ZnO

被引：45

作者：

Kim S.Y. ^{[1
]}

Jang H.W. ^{[1
]}

Kim J.K. ^{[1
]}

Jeon C.M. ^{[1
]}

Park W.I. ^{[1
]}

Yi G.-C. ^{[1
]}

Lee J.-L. ^{[1
]}

机构：

[1] Dept. of Materials Science and Eng., Pohang Univ. of Sci. and Technology, Pohang

来源：

Journal of Electronic Materials | 2002年 / 31卷 / 8期

关键词：

Ohmic contact; Photoemission spectroscopy; ZnO;

D O I：

10.1007/s11664-002-0197-1

中图分类号：

学科分类号：

摘要：

We report a low-resistance ohmic contact on undoped ZnO using a promising contact scheme of Ti/Al. Specific-contact resistivity, as low as 9.0 × 10-7 Ωcm2, was obtained from the Ti (300 Å)/Al (3,000 Å) contact annealed at 300°C. It was found that TiO was produced, and the atomic ratio of Zn/O was dramatically increased after annealing at 300°C. This provides the evidence that a number of oxygen vacancies, acting as donors for electrons, were produced below the contact. This leads to the increase of electron concentration via the reduction of contact resistivity.

引用

页码：868 / 871

页数：3

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