Fully transparent flexible transistors built on metal oxide nanowires

被引：4

作者：

Chen D. ^{[1
]}

Xu J. ^{[1
,2
]}

Shen G. ^{[1
]}

机构：

[1] Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan

[2] School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan

来源：

Frontiers of Optoelectronics in China | 2010年 / 3卷 / 3期

基金：

高等学校博士学科点专项科研基金;

关键词：

field-effect transistor (FET); metal oxide; nanowires; thin-film transistor (TFT); transparent electronics;

D O I：

10.1007/s12200-010-0110-0

中图分类号：

学科分类号：

摘要：

Transparent electronics has attracted great research efforts in recent years due to its potential to make significant impact in many area, such as next generation displays, ultraviolet (UV) detectors, solar cells, charge-coupled devices (CCDs), and so on. Central to the realization of transparent electronics is the development of high performance fully transparent thin-film transistors (TFTs). One-dimensional (1-D) nanostructures have been the focus of current researches due to their unique physical properties and potential applications in nanoscale electronics and optoelectronics. Among 1-D nanostructures, transparent metal oxide nanowires are one of the best candidates to make fully transparent TFTs. We provide in this paper the most recent development on the fabrication of fully transparent TFT using metal oxide nanowires as the device elements. First, the review article gives a general introduction about the development of transparent electronics using different kinds of materials as the devices elements, including organic semiconductors, metal oxide thin films, and metal oxide nanowires. Second, the growth of metal oxide nanowires using vapor phase methods governed by two different growth mechanisms: vaporsolid mechanism and vapor-liquid-solid mechanism, respectively, are described. Third, the fabrication of transparent and flexible TFTs using different metal oxides nanowires is comprehensively described. In conclusion, the challenges and prospects for the future are discussed. © 2010 Higher Education Press and Springer-Verlag Berlin Heidelberg.

引用

页码：217 / 227

页数：10

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