Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

被引:5417
作者
Zhang, Haijun [2 ,3 ]
Liu, Chao-Xing [4 ]
Qi, Xiao-Liang [1 ]
Dai, Xi [2 ,3 ]
Fang, Zhong [2 ,3 ]
Zhang, Shou-Cheng [1 ]
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China
关键词
ELECTRONIC-STRUCTURE; SPIN; TRANSITION;
D O I
10.1038/NPHYS1270
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1-x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Gamma point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3 eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.
引用
收藏
页码:438 / 442
页数:5
相关论文
共 30 条
[1]   Quantum spin Hall effect and topological phase transition in HgTe quantum wells [J].
Bernevig, B. Andrei ;
Hughes, Taylor L. ;
Zhang, Shou-Cheng .
SCIENCE, 2006, 314 (5806) :1757-1761
[2]   Quantum spin hall effect [J].
Bernevig, BA ;
Zhang, SC .
PHYSICAL REVIEW LETTERS, 2006, 96 (10)
[3]   ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].
BLACK, J ;
CONWELL, EM ;
SEIGLE, L ;
SPENCER, CW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251
[4]   Helical edge and surface states in HgTe quantum wells and bulk insulators [J].
Dai, Xi ;
Hughes, Taylor L. ;
Qi, Xiao-Liang ;
Fang, Zhong ;
Zhang, Shou-Cheng .
PHYSICAL REVIEW B, 2008, 77 (12)
[5]   Structural distortion and magnetism in transition metal oxides: crucial roles of orbital degrees of freedom [J].
Fang, Z ;
Terakura, K .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (11) :3001-3014
[6]   Topological insulators in three dimensions [J].
Fu, Liang ;
Kane, C. L. ;
Mele, E. J. .
PHYSICAL REVIEW LETTERS, 2007, 98 (10)
[7]   Topological insulators with inversion symmetry [J].
Fu, Liang ;
Kane, C. L. .
PHYSICAL REVIEW B, 2007, 76 (04)
[8]   A topological Dirac insulator in a quantum spin Hall phase [J].
Hsieh, D. ;
Qian, D. ;
Wray, L. ;
Xia, Y. ;
Hor, Y. S. ;
Cava, R. J. ;
Hasan, M. Z. .
NATURE, 2008, 452 (7190) :970-U5
[9]   Quantum spin Hall effect in graphene [J].
Kane, CL ;
Mele, EJ .
PHYSICAL REVIEW LETTERS, 2005, 95 (22)
[10]   Z2 topological order and the quantum spin Hall effect -: art. no. 146802 [J].
Kane, CL ;
Mele, EJ .
PHYSICAL REVIEW LETTERS, 2005, 95 (14)