Rectifying properties of poly(N-methylaniline)

被引：17

作者：

Syed Abthagir P. ^{[1
]}

Saraswathi R. ^{[1
]}

机构：

[1] Department of Materials Science, Madurai Kamaraj University, Madurai-625 021, Tamil Nadu

来源：

Journal of Materials Science: Materials in Electronics | 2004年 / 15卷 / 2期

关键词：

Polyaniline; Carrier Concentration; Barrier Potential; Work Function; Schottky Barrier;

D O I：

10.1023/B:JMSE.0000005380.59176.c1

中图分类号：

学科分类号：

摘要：

The electrical properties of various metal (Al/In/Sb/Sn)/poly(N-methylaniline)/gold Schottky diodes are described. The temperature-dependent dark current (J)-voltage (V) characteristics indicate that the junctions formed with Al/In possess better rectifying properties with Schottky emission. In the case of junctions formed with Sb/Sn, Poole-Frenkel emission appears to be the dominant mechanism. The junction parameters of ideality factor, reverse saturation current, and barrier potential have been evaluated and compared with the reported values for Schottky barriers based on polyaniline and a few of its substituted derivatives. The capacitance (C)-voltage (V) data obtained at different frequencies have been used to evaluate the carrier concentration, mobility, depletion width, contact potential, and work function of the polymer. © 2004 Kluwer Academic Publishers.

引用

页码：81 / 86

页数：5

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