SEMICONDUCTOR-DEVICE SIMULATION

被引：73

作者：

FICHTNER, W ^{[1
]}

ROSE, DJ ^{[1
]}

BANK, RE ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,FAC MATH,SAN DIEGO,CA 92103

来源：

关键词：

D O I：

10.1109/T-ED.1983.21256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1018 / 1030

页数：13

共 65 条

[1] ADLER MS, 1979, NUMERICAL ANAL SEMIC
[2] BANK RE, 1983, IEEE T ELECTRON DEV, V30, P1031, DOI 10.1109/T-ED.1983.21257
[3] GLOBAL APPROXIMATE NEWTON METHODS
BANK, RE
ROSE, DJ
[J]. NUMERISCHE MATHEMATIK, 1981, 37 (02) : 279 - 295
[4] BANK RE, 1979, 1978 SPARS MATR P PH
[5] BAUER G, 1974, SPRINGER TRACTS MODE, V74
[6] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[7] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
BUTURLA, EM
COTTRELL, PE
GROSSMAN, BM
SALSBURG, KA
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231
[8] BUTURLA EM, 1980, IEEE INT SOL STAT CI, P76
[9] CHANG WH, 1976, IEEE T MICROWAVE THE, V24
[10] Conwell E M, 1967, HIGH FIELD TRANSPORT